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| SRLD-650-10 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at S6510MG TECHNICAL DATA Visible Wavelength Laserdiode Structure: InGaAlP, index guided single transverse mode Lasing wavelength: 655nm typ. Output power: mW, CW 10 Package: 5.6 mm MG, TO-18 PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc=25C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operation Case Temperature TC Storage Temperature TSTG RATING 10 2 30 -10 .. +60 -40 .. +85 UNIT mW V V C C Optical-Electrical Characteristics (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN Threshold Current Ith Operation Current Iop Po =10mW Operating Voltage Vop Po =10mW Lasing Wavelength lp Po =10mW 650 Beam Divergence Po =10mW 5 // Beam Divergence Po =10mW 30 Slope Efficiency 0.5 Monitor Current Im Po =10mW 50 TYP 15 26 2.2 655 7 32 0.7 200 MAX UNIT 20 mA 40 mA 2.6 V 660 nm 9 38 mW/mA 1 500 A |
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